BluGlass reduces GaN film growth impurities through RPCVD technology

Electronic enthusiast network news [translation / Joyce] Australia BluGlass company claims that using their low temperature remote plasma chemical vapor deposition (RPCVD) technology can produce ideal purity gallium nitride (GaN). The company says that their RPCVD technology can produce gallium nitride with low levels of carbon, hydrogen, and oxygen impurities at levels comparable to the vapor-deposited GaN layers of metal organics.

Evans AnalyTIcal Group, a well-known and independent material property company, uses secondary ion spectroscopy to prove that BluGlass technology can control the level of carbon, hydrogen and oxygen impurities to less than 1 * 1017 atoms per cubic centimeter.

Now BluGlass plans to optimize the p-GaN layer and introduce the advantages of RPCVD to customers, including the improvement of the efficiency of LED devices obtained by this technology compared to traditional MOCVD.

BluGlass CEO Giles Bourne said: "This achievement is a breakthrough for our company and a key step to prove our technical strength to the industry and future customers. As we all know, carbon and oxygen inhibit the obstacles of RPCVD technology, so these two The reduction in impurities will be an important discovery. "


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